? 2009 ixys corporation, all rights reserved ds100171(7/09) v ces = 1200v i c110 = 58a v ce(sat) 3.9v genx3 tm 1200v igbt w/ diode high-speed pt igbt for 20-50 khz switching IXGN82N120C3H1 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 130 a i c110 t c = 110 c 58 a i f110 t c = 110 c 42 a i cm t c = 25 c, 1ms 500 a ssoa v ge = 15v, t vj = 125 c, r g = 3 i cm = 164 a (rbsoa) clamped inductive load v ce v ces p c t c = 25 c 595 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g sot-227b, minibloc g = gate, c = collector, e = emitter c either emitter terminal can be used as main or kelvin emitter g e c e c c e153432 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 1ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v, note 1 50 a t j = 125 c 6 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 82a, v ge = 15v, note 2 3.3 3.9 v features z optimized for low switching losses z square rbsoa z high current capability z isolation voltage 2500 v~ z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z smps z pfc circuits z welding machines z lamp ballasts advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXGN82N120C3H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 sot-227b minibloc (ixgn) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 2 38 62 s c ies 7900 pf c oes v ce = 25v, v ge = 0v, f = 1 mhz 685 pf c res 197 pf q g(on) 340 nc q ge i c = 82a, v ge = 15v, v ce = 0.5 ? v ces 55 nc q gc 145 nc t d(on) 30 ns t ri 77 ns e on 5.0 mj t d(off) 194 ns t fi 100 ns e off 2.5 5.0 mj t d(on) 32 ns t ri 80 ns e on 6.8 mj t d(off) 230 ns t fi 270 ns e off 4.0 mj r thjc 0.21 c/w r thck 0.05 c/w inductive load, t j = 25c i c = 82a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 inductive load, t j = 125c i c = 82a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 60a, v ge = 0v, note 1 2.5 v t j = 150c 1.4 1.8 v i rm 8.3 a t rr 140 ns r thjc 0.42 c/w i f = 60a, v ge = 0v, t j = 100c -di f /dt = 200a/ s, v r = 300v notes: 1. part must be heatsunk for high-temp ices measurement. 2. pulse test, t 300 s, duty cycle, d 2%. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
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